Technical Specifications

Parameters

Basic Principle

  Laser curvature method based on Stoney's formula

Measurement Method

 Utilizes dual-wavelength lasers for sample scanning measurement

  Wavelengths: 635nm / 670 nm, >5mW

Main Function

 Automatically measures wafer sample contour, sag height, curvature, radius of curvature, and film stress.

Film Stress Testing Range

 1~10000 MPa

ROC Testing Range

  2-20000m

ROC Reproducibility

 ＜1 % 1σ ( ROC < 20 m)

  ＜2.5 % 1σ ( ROC  < 200 m) 

Minimum Scanning Step

   0.1 mm

Sample Size

  Model M6: Max. 6 inches, downward compatible with 4, 3, 2 inches

  Model M8: Max. 8 inches, downward compatible with 6, 4, 2 inches

  Model M12: Max. 12 inches, downward compatible with 8, 6, 4 inches

Sample Stage

  Electrically rotating stage

Sample Substrate Correction

  Capable of correcting raw surface irregularities through data processing

  (for subtractive mode) 

Power Supply

  110-220 VAC & 200 Watts Maximum

Communication Interface

  USB 3.0 

Operating Temperature

  Room temperature

Operating Software:

 Visualizes 2D/3D display of wafer contour, sag height, curvature radius and film stress distribution.

  Window interface/Compatible with Windows 10 system 

Operating Computer

  Standard branded desktop all-in-one:

  Display: ≥21 inches, ≥8 GB memory, CPU ≥ 2.5 GHz, ≥512 GB hard disk

Dimension

 850mm * 550 mm * 450mm

Weight

  35Kg

Warranty

  One year

Remarks

  The above-listed technical specifications and parameters are subject to up

  dates without further notice. Contact us if you have any questions.